Cu doping in TiNbCrZrN high-entropy ceramic films: structural and mechanical optimization for enhanced resistance to hydrogen-induced brittleness

High-entropy nitride ceramic films demonstrate exceptional wear resistance through their extreme hardness but suffer from inherent brittleness that compromises service reliability in hydrogen-rich environments. This study adopted a copper-phase toughening strategy for TiNbCrZrCuN films synthesized by high-power impulse magnetron sputtering (HiPIMS), systematically investigating the effects of Cu doping (0–9.2 at%) on the microstructural evolution and mechanical properties of the films. The optimal 2.1 at% Cu-doped film achieves a synergistic combination of solid solution strengthening and copper-mediated ductile-phase toughening, resulting in balanced mechanical performance with 18.5 GPa hardness and enhanced fracture toughness. The Cu-containing films reduces wear rate by 43 % (2.43 × 10 −6 mm 3/N m) compared to Cu-free counterparts through crack deflection at Cu-rich interfaces and plastic strain accommodation. Electrochemical hydrogen charging tests further reveal enhanced hydrogen embrittlement resistance of Cu-doped films, with their service life extended by 150 % due to Cu-induced partial amorphization that obstructs hydrogen diffusion pathways, enabling the film to achieve a lower hydrogen diffusion coefficient (1.3 × 10 −9 cm 2/s) and higher hydrogen trap density (1.4 × 10 −3 mol/cm 3) while maintaining mechanical integrity. The findings demonstrate the effectiveness of ductile-phase toughening strategy in overcoming the intrinsic brittleness limitation of ceramic nitride films, providing a viable pathway for designing wear-resistant films capable of withstanding combined mechanical stresses and hydrogen-induced degradation.

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